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| SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK3012 (F16W60VX2) 600V 12A FEATURES Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case :: MTO-3P Case E-pack (Unit : mm) Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 100-200V input Inverter Power Factor Control Circuit RATINGS Absolute Maximum Ratings Tc = 25 Item Symbol Conditions Tstg Storage Temperature Channel Temperature Tch VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous Drain CurrentDC ID IDP Continuous Drain CurrentPeak) IS Continuous Source CurrentDC Total Power Dissipation PT IAS Single Pulse Avalanche Current Tch = 25 TOR (Recommended torque : 0.5Nm Mounting Torpue Ratings -55150 150 600 30 16 48 16 125 16 0.8 Unit V A W A Nm Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranconductance Static Drain-Source On-tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage jc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions 2SK3012( F16W60VX2 ) Min. 600 Typ. Max. 250 0.1 6.2 2.5 10.0 0.45 3 0.6 3.5 1.5 1 Unit V A S V / nC pF 280 500 ns ID = 1mA, VGS = 0V VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V ID = 8A, VDS = 10V ID = 8A, VGS = 10V ID = 1mA, VDS = 10V IS = 8A, VGS = 0V junction to case VGS = 10V, ID = 16A, VDD = 400V VDS = 10V, VGS = 0V, f = 1MHZ ID = 8A, VGS = 10V, RL = 19 85 2300 180 480 130 260 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK3012 32 Tc = -55C 28 Transfer Characteristics 25C 100C 24 Drain Current ID [A] 20 16 12 8 4 0 150C VDS = 25V pulse test TYP 0 5 10 15 20 Gate-Source Voltage VGS [V] 2SK3012 10 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 1 ID = 8A 0.1 0.01 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK3012 6 Gate Threshold Voltage 5 Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK3012 100 Safe Operating Area 10 100s Drain Current ID [A] 200s R DS(ON) limit 1 1ms 10ms DC 0.1 Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK3012 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-4 10-2 10-3 10-1 100 101 102 Time t [s] 2SK3012 100 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 80 60 40 20 0 0 50 100 150 Starting Channel Temperature Tch [C] 2SK3012 10000 Capacitance Ciss Capacitance Ciss Coss Crss [pF] 1000 Coss 100 Crss f=1MHz Tc=25C TYP 10 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK3012 Single Avalanche Current - Inductive Load VDD = 90V VGS = 15V 0V Rg = 15 100 IAS = 16A 10 EAR = 50mJ EAS = 500mJ Single Avalanche Current IAS [A] 1 0.1 0.1 1 10 100 Inductance L [mH] 2SK3012 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK3012 500 Gate Charge Characteristics 20 VDS Drain-Source Voltage VDS [V] VDD = 400V 200V 300 100V VGS 15 10 200 5 100 ID = 16A TYP 0 0 50 100 150 0 200 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 |
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